发明名称 |
Plasma generating apparatus and method using modulation system |
摘要 |
The present invention provides a plasma generating method by using a modulation system in order to improve inner uniformity of plasma in plasma generating apparatus using the ECR plasma apparatus of another ECR system for performing an etching or deposition process. Unlike conventional fixed current systems, the embodiment disclosed transfers a high density ion portion to radiation form, thereby improving the uniformity of etching velocity or depositing velocity in wafers.
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申请公布号 |
US5087857(A) |
申请公布日期 |
1992.02.11 |
申请号 |
US19900560756 |
申请日期 |
1990.07.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN, TAE-HYUK |
分类号 |
H05H1/46;C23C16/50;C23C16/511;C23F4/00;H01J37/32;H01L21/30;H01L21/302;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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