发明名称 Data input circuit for dual access port storage device
摘要 A data input circuit for dual access port storage device comprises a data latching pulse generator (20), a latching circuit (30) serving to produce a second data latching pulse, and an input buffer (10), so that it is possible to prevent the appearance of invalid multiple selection phenomena, or IMS phenomena, caused by the large number of data input signals of indeterminate state, by latching the width of the data latching pulse correspondingly with that of the block write signals when the dual access port storage device executes a block write mode. <IMAGE>
申请公布号 FR2665568(A1) 申请公布日期 1992.02.07
申请号 FR19900009993 申请日期 1990.08.03
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 JEONG SEONG-OUK
分类号 G11C7/10;G11C7/22 主分类号 G11C7/10
代理机构 代理人
主权项
地址