发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To suppress charge-discharge current instantaneously flowing through a sense amplifier circuit and a source wiring by a method wherein a plurality of transistors have mutual conductance values different with the impedance of the source wiring. CONSTITUTION:A source wiring 61 gets connection of the respective drains of a plurality of sense amplifier driving NMOSs 641-64n, and a source wiring 71 connection of the respective drains of a plurality of sense amplifier driving PMOSs 741-74n: out of NMOS 641-64n, the mutual conductance, e.g., the gate width, of the furthest end PMOS 641 is equalized with that of the NMOS 64n and gradually decreased like 641<642<...<64n-1<64n with decreases in impedance of the source wiring 61. Moreover, the mutual conductance, e.g., the gate width, of PMOSs 741-74n is equalized with that of the PMOS 24n at the furthest PMOS 74n and gradually decreased with decreased in impedance of the source wiring 71 like 741<742<...<74n-1<74n.
申请公布号 JPH0435064(A) 申请公布日期 1992.02.05
申请号 JP19900142666 申请日期 1990.05.31
申请人 OKI ELECTRIC IND CO LTD 发明人 ISHIMURA TAMIHIRO;MIYAWAKI MASABUMI
分类号 G11C11/401;G11C11/409;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/401
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