发明名称 |
Semiconductor devices with low dislocation defects and method for making same. |
摘要 |
<p>Semiconductor devices having a low density of dislocation defects can be formed of epitaxial layers grown on defective or misfit substrates by making the thickness (t) of the epitaxial layer sufficiently large in comparison to the maximum lateral dimension (L). With sufficient thickness, threading dislocations arising from the interface will exit the sides of the epitaxial structure and not reach the upper surface. Using this approach, one can fabricate integral gallium arsenide on silicon optoelectronic devices and parallel processing circuits. One can also improve the yield of lasers and photodetectors. <IMAGE></p> |
申请公布号 |
EP0469790(A1) |
申请公布日期 |
1992.02.05 |
申请号 |
EP19910306809 |
申请日期 |
1991.07.25 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
FITZGERALD, EUGENE ARTHUR |
分类号 |
H01L21/20;H01L21/203;H01L21/338;H01L27/146;H01L29/812 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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