METHOD OF FORMING A CONDUCTIVE STRUCTURE ON A SUBSTRATE

摘要

A method of forming a conductive structure on a substrate (10) by using both of the via-filling and stud-forming metallization techniques. A stud that is approximately one-half the thickness of the final stud is defined on a conductive layer (12). The stud-forming mask (14) is left in place. Then the sidewalls of the mask are positively tapered, and an insulator layer (16) is deposited on the substrate. The insulator is then etched to expose the stud forming mask, and the mask is removed. The sidewalls of the vias thus defined in the insulator layer are then positively tapered. By positively tapering both the stud mask prior to insulator deposition and the insulator via prior to metal deposition, insulator gap-fill and metal hole-fill problems are eliminated.