METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE TO PREVENT ELECTRO-MIGRATION AND STRESS-MIGRATION

摘要

PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to prevent EM(Electro-Migration) and SM(Stress-Migration) by removing residues in CMP(Chemical Mechanical Polishing) using sputter etch processing. CONSTITUTION: An insulating layer with a contact hole is formed on a substrate. A barrier metal film and a tungsten film are filled in the contact hole. A tungsten plug is formed by CMP of the tungsten film and the barrier metal film. Sputter etch processing(24) is then performed. Then, a metal interconnection is formed on the resultant structure.