| 摘要 |
PURPOSE:To connect an upper layer to a lower layer on a part where three layer of conductors are superposed by forming a connecting part of a first conductor to a third conductor in a first opening, and further obtaining conduction of a second conductor by a sidewall conductor formed at the sidewall of the opening. CONSTITUTION:A polysilicon film 13 having a width W1 is divided by an opening 15 having a width W2 (> W1) in a connecting part of the film 13 to a side polysilicon film 16, and connected to the film 16 at the sidewall of the opening 15. Since the film 16 is formed along the inner periphery of the opening 15, the films 13 at both right and left sides of the opening are conducted by the sidewall polysilicon film. Accordingly, an upper aluminum layer 14 can be connected to a lower n<+> type diffused layer 12 in a part where the layers 12, the films 13, 14 are superposed. |
