LIGHT-EMITTING ELEMENT OF GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To increase the number of luminous points, to enhance the brightness of individual luminous points and to increase the luminous intensity of a surface light-emitting operation as a whole by a method wherein an electric current in a prescribed magnitude is applied across an n-layer and an i-layer in the forward direction for a prescribed time. CONSTITUTION:A gallium nitride-based compound semiconductor light-emitting element is provided with the following: an n-layer composed of an n-type gallium nitride-based compound semiconductor (AlxGa1-xN; including X=0); and an i-layer composed of an i-type gallium nitride-based compound semiconductor (AlxGa1-xN; including X=0). At the light-emitting element, an electric current in a prescribed magnitude is applied across the n-layer and said i-layer in the forward direction for a prescribed time. When the electric current at a rated current of, e.g. 20mA is made to flow to a light-emitting diode 10 for 10 hours, its luminous intensity is increased by 30%.