VERFAHREN ZUM HERSTELLEN EINER ZWEI-WANNEN-CMOS-HALBLEITERSTRUKTUR.,申请号DE19853584757-传众专利搜索

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发明名称	VERFAHREN ZUM HERSTELLEN EINER ZWEI-WANNEN-CMOS-HALBLEITERSTRUKTUR.
摘要
申请公布号	DE3584757(D1)	申请公布日期	1992.01.09
申请号	DE19853584757	申请日期	1985.09.03
申请人	INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y., US	发明人	KINNEY, WAYNE IRVING, ALBUQUERQUE NEW MEXICO 87111, US;KOBURGER, CHARLES WILLIAM, UNDERHILL VERMONT 05489, US;LASKY, JEROME BRETT, ESSEX JUNCTION VERMONT 05452, US;NESBIT, LARRY ALAN, WILLISTON VERMONT 05495, US;WHITE, FRANCIS ROGER;TROUTMAN, RONALD ROY, ESSEX JUNCTION VERMONT 05452, US
分类号	H01L27/08;H01L21/033;H01L21/76;H01L21/762;H01L21/8238;H01L27/092;H01L29/06;(IPC1-7):H01L21/82;H01L21/00	主分类号	H01L27/08
代理机构		代理人
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