| 摘要 |
PURPOSE:To adjust a device integrally by forming a hole to a mounting substrate, mounting an output FET on a metallic plate in the hole or turning over a high-output FET and mounting it into the hole, dissipating heat by a metallic shield plate and directly mounting a power amplifier used for the small-sized telephone device to a main substrate. CONSTITUTION:A square hole 32, into which a high-output FET is introduced, is formed at the position, where the high-output FET must be loaded, of a mounting substrate 31, and a metallic plate 33 in thickness of approximately 1mm is installed on the rear of the substrate 31. A high-output FET package is mounted into the square hole 32 of the mounting substrate 31. That is, the high-output FET 42 is mounted to the mounting substrate 31 in such a manner that the metallic plate 33 and a lead-end soldering section 46 are coated with solder 47 by a dispenser and soldered by a reflow. The metallic plate 33 has functions as the heat sink, mounting plate and electrical ground of, the high-output FET at that time. The high-output FET 54 is turned over, and inserted into the square hole of a substrate 52, and an output lead terminal 55 and an input lead terminal 55' may be soldered to the pattern of the substrate 52. The heat of the high-output FET 54 is dissipated by a metallic shield plate 58. |
