| 摘要 |
PURPOSE:To evaluate the fine shape of a resist pattern by an electron microscope without breaking a wafer by adopting a peculiar test pattern. CONSTITUTION:A test pattern for a mask pattern for a positive type resist is composed of a line pattern 2, a terminal of which is positioned at the center of an adjacent square-shaped space region 1 having no other pattern. When such a test pattern is used, the short line pattern 2 having a dummy cross section 2a at approximately the center of the space 1 is formed while being projected into the space 1 having no other pattern in the periphery. Consequently, the dummy cross section 2a can be observed by an electron microscope from an oblique upper section. Dummy end faces in the mutually different directions are formed to a resist pattern to be verified by using the test pattern having such a shape, thus facilitating observation by the electron microscope after the formation of the resist pattern. |
