THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

摘要

Provided are a thin film transistor substrate and a method for manufacturing the same. The thin film transistor substrate comprises: a substrate; a first gate electrode disposed on the substrate; a first insulating layer disposed on the first gate electrode; a semiconductor layer disposed on the first insulating layer to be overlapped with the first gate electrode; a source electrode and a drain electrode disposed to be at least partially overlapped with the semiconductor layer and spaced apart from each other; a second insulating layer disposed on the source electrode and the drain electrode; a second gate electrode disposed on the second insulating layer to be partially overlapped with the first gate electrode; a third insulating layer disposed on the second gate electrode; a first hole formed in the first insulating layer to expose a portion of the first gate electrode; a second hole formed in the second insulating layer to be connected to the first hole; a third hole formed in the third insulating layer, connected to the second hole, and partially exposing the second gate electrode; and a connection electrode formed on the third insulating layer and filling a contact area defined by the first hole, the second hole, and the third hole to electrically connect the first gate electrode and the second gate electrode. The thin film transistor substrate of the present invention can reduce variations in threshold voltage.