Metal-insulator-metal stack and method for manufacturing the same

摘要

A method for manufacturing a metal-insulator-metal (MIM) stack is described. The method includes forming a temporary stack by depositing a bottom electrode comprising at least one metal layer; depositing a dielectric comprising at least one layer of a dielectric material having a first dielectric constant value; and depositing a top electrode comprising at least one metal layer. The step of depositing the bottom and/or top electrode includes depositing a non-conductive metal oxide layer directly in contact with the dielectric; and after the step of depositing the bottom and/or top electrode's non-conductive metal oxide layer and the dielectric, subjecting the temporary stack to a stimulus, which transforms the non-conductive metal oxide into a thermodynamically stable oxide having conductive properties or into a metal, and the dielectric material into a crystalline form having a second dielectric constant value higher than the first dielectric constant value, thereby creating the final MIM stack.

主权项

1. A method for manufacturing a metal-insulator-metal (MIM) stack, comprising:
forming a temporary stack by:
depositing a bottom electrode comprising at least one metal layer;depositing a dielectric comprising at least one layer of a dielectric material having a first dielectric constant value; anddepositing a top electrode comprising at least one metal layer;wherein depositing at least one of the bottom electrode or the top electrode includes depositing a non-conductive metal oxide layer directly in contact with the dielectric, wherein the non-conductive metal oxide is in a metastable and high oxidation state; and after depositing the non-conductive metal oxide layer and the dielectric, subjecting the temporary stack to a stimulus to cause the non-conductive metal oxide layer to release oxygen and transform into a thermodynamically stable oxide having conductive properties or into a metal, and to cause the dielectric to incorporate the released oxygen and transform into a crystalline form having a second dielectric constant value higher than the first dielectric constant value.