Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

摘要

A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed.

主权项

1. A method of manufacturing a semiconductor device, comprising:
(a) modifying an outermost surface of a substrate by supplying a nitriding gas to the substrate; and (b) forming a thin film containing a specific element, oxygen, carbon, and nitrogen on the modified outermost surface of the substrate by performing a cycle one or more times, the cycle comprising sequentially performing:
(b-1) supplying a specific element-containing gas to the substrate;(b-2) supplying an oxidizing gas to the substrate;(b-3) supplying a carbon-containing gas to the substrate; and(b-4) supplying a nitriding gas to the substrate.