| 摘要 |
PURPOSE:To make a process easy in which a collector electrode and an antireflection film are formed by a method wherein the collector electrode is formed on the surface of a solar cell, the surface of the collector electrode is fully covered with the antireflection film, and a intermodule connecting ribbon wire is soldered to the collector electrode selectively tearing off the antireflection film. CONSTITUTION:An N-type diffusion layer 2 is formed on the front of a P-type crystal silicon wafer 1 to form a P/N junction. An Al paste 3 is printed on all the rear of the wafer 1 and fired, and an Ag paste is printed and fired to form a rear electrode 4. A collector electrode 5 is printed on the front of the wafer 1 with Ag paste and fired. In succession, the wafer 1 is dip-soldered to provide solder coats 6 and 7 onto the Ag patterns 4 and 5 respectively. Then, an ITO film is formed on the whole front of the wafer 1 through sputtering to serve as a conductive antireflection film 8. Solar cell modules 10 formed as above are connected in series with ribbon wires 11. When the ribbon wires 11 are hot-pressed against solders 7 on the collector electrodes 5 at required points, the solders 7 are fused and the antireflection film is torn off. |
