| 摘要 |
<p>PURPOSE:To easily integrate and to reduce attenuation of quantity of a light by covering a light propagating region between a light emitting diode and photodiode with a cylindrical light reflecting member. CONSTITUTION:A light emitting diode 10, a photodiode 20 formed through a light propagating region 14 covered at its periphery with an aluminum layer 13, and an npn transistor 30 are provided. A light generated by recombining minority carrier injected to the pn junction of the diode 10 is reflected in a direction perpendicular to the surface of a pn junction, further covered on its periphery with a light shielding film such as the layer 13 of abut 2[mm] of thickness, reflected on a silicon oxide film 22 of the photodiode 20 through a region 14 of several tens [mm] of height, and introduced to the pn junction of the photodiode 20. Since a distance between the diode 10 and the photodiode 20 is remarkably shorter than that of a conventional semiconductor device, it prevents external leakage of the light by the layer 13 to reduce the loss of the light occurring between the diode 10 and the photodiode 20, thereby improving the incident efficiency of the light incident to the photodiode 20.</p> |
