| 摘要 |
<p>The disclosed photoresist process employs an iline peak-containing light source, such as that of the mercury spectrum, in conjunction with a dye (13) capable of both absorbing i-line light and withstanding those subsequent [those] baking procedures employed in producing portable-conforming-mask (PCM) photoetchings. Applicant has found that a series of butadiene or bromine substituted butadiene dyes in general, and N, N min -Dibutyl-N,N min -Di (1-(4,4-dicyano-1,3-butadiene))-1,6-hexanediamine, in particular, are particularly well suited to these purposes. Such dyes are most preferably used in conjunction with a second dye (13) capable of absorbing a non-i-line light source used to expose a bottom photoresist layer (14) of a PCM system. <IMAGE></p> |
