发明名称 |
Semiconductor process using selective deposition |
摘要 |
A process for fabricating semiconductor devices is disclosed which utilizes a selective deposition process to reduce the total number of process steps and especially the total number of photolithography steps required. In accordance with one embodiment of the invention a semiconductor substrate is provided having an insulating layer, a nucleating layer, and a second insulating layer overlaying the substrate. A photoresist mask is used as an implant mask and as an etch mask to expose a portion of nucleating layer. A second implant mask is formed by the selective deposition of tungsten or other material on the exposed nucleating layer. The selectively deposited material is then used to mask for a second ion implantation.
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申请公布号 |
US5070029(A) |
申请公布日期 |
1991.12.03 |
申请号 |
US19910650324 |
申请日期 |
1991.02.04 |
申请人 |
MOTOROLA, INC. |
发明人 |
PFIESTER, JAMES R.;HAYDEN, JAMES D. |
分类号 |
H01L21/033;H01L21/266;H01L21/336 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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