| 摘要 |
PURPOSE:To improve the efficiency of a stage for forming an anode and cathode by executing partial etching of gold or platinum and silver in this order, thereby forming the cathode of the gold or platinum and the anode of the silver on a semiconductor substrate. CONSTITUTION:A silicon oxide film 9 is deposited as an insulating film over the entire surface of the silicon substrate 1 having a hole formed by anisotropic etching and the rear surface is so formed as to be coated with a hydrophobic insulating film 13. A pair of the cathode and anode are deposited in the hole of the substrate 1. This cathode and anode are respectively partly extended to the outer side of the groove (hole). An electrolyte-contg. body 11 is filled in the hole of the substrate 1 and further the upper part of the hole is coated with a gas permeable film 12 in the form of covering the entire upper part of the substrate 1. The side surfaces and rear surface are also so formed that the film 12 is utilized as the insulating film. |
