| 摘要 |
PURPOSE:To remove the organic hardening film on a substrate completely in a short time by soaking the substrate in an organic separating agent so as to separate the organic hardening film, and then bringing it into contact with liquefied gas or supercritical gas including the subcritical condition so as to remove the separated remnants and other pollutant. CONSTITUTION:A substrate, where an organic hardening film is made, is soaked in an organic separating agent so as to separate the hardening film from the substrate, and next the substrate is brought into contact with liquefied gas or supercritical gas including critical condition. That is, the carbon dioxide gas supplied from a carbon dioxide gas cylinder 1 is put into supercritical condition through a heater 2 and a pressurizer 3, and is supplied continuously to the pressure-resistant container 4 as a cleaning vessel, wherein semiconductor wafers from which organic hardening films are removed by treating them with, for example, organic separating agents are stocked, and the semiconductor wafers are brought into contact with supercritical carbon dioxide gas here and cleaned by it. Hereby, the organic hardening film can be removed from the substrate completely in a short time. |
