发明名称 |
HYDROTHERMAL PROCESS FOR GROWING OPTICAL-QUALITY SINGLE CRYSTALS |
摘要 |
A hydrothermal process for growing a crystal of MTiOXO4 at an elevated temperature is disclosed which employs a growth medium comprising a mineralizer solution, and is characterized as employing aqeuous mineralizer solution in which the concentration of M is at least about 8 molar, and as employing a growth region temperature of less than about 500 DEG C. and/or a pressure of less than 14,000 psi during crystallization. M is selected from the group consisting of K, Rb, Tl and NH4 and mixtures thereof, and X is selected from the group consisting of P and As and mixtures thereof.
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申请公布号 |
US5066356(A) |
申请公布日期 |
1991.11.19 |
申请号 |
US19900461562 |
申请日期 |
1990.01.05 |
申请人 |
E. I. DU PONT DE NEMOURS AND COMPANY |
发明人 |
FERRETTI, AUGUST;GIER, THURMAN E. |
分类号 |
C30B7/10;C30B7/00;C30B29/14;C30B29/32;G02B1/02 |
主分类号 |
C30B7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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