SEMICONDUCTOR MEMORY CIRCUIT DEVICE HAVING GATE ARRAY MEMORY CELL

摘要

PURPOSE:To amplify read data of a memory cell and output it to an output line without changing a transistor size so as to improve driving ability and reduce read-out time by employing a memory cell equipped with an output signal amplifying means on an output stage. CONSTITUTION:While a data holding unit A holds data before performing read- out operation, when a read-out signal rises by an H level from a read-out signal line 25, voltage applied to an output line 29 drops to a low reference level (Lo) by turn-ON of an N-channel MOS transistor Tr2. At the same time base potential of a bipolar transistor Tr1 is dropped to the L, level via a resistor R1 to have the transistor Tr1 turned OFF. Then when the read-out signal drops to the L level, the transistor Tr2 is turned OFF to have a transmission gate 26 opened. Data held in the data holding unit A is applied to the transistor Tr1, which is then turned ON. Thus the transistor Tr1 amplifies the held data and outputs its output data to the output line 29.