| 摘要 |
A solid-state image sensor comprises signal charge storage diodes formed in a semiconductor substrate, a plurality of signal charge read-out sections formed adjacent to the signal charge storage diodes on the semiconductor substrate, a plurality of signal charge transfer sections formed close to the signal charge read-out sections on the semiconductor substrate, pixel electrodes electrically coupled to the signal charge storage diodes, and a plurality of bias-charge injecting gates and bias-charge injecting diodes, which are provided adjacent to the signal charge transfer sections to inject bias charges into the signal charge storage diodes via the signal charge read-out sections.
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