| 摘要 |
<p>The invention relates to an integrated circuit having a lateral transistor including emitter (7) and collector (8) regions of a first type of conductivity which are laterally spaced apart and contained in a region (4, 5) of a second type of conductivity opposite to the first, and starting from the surface of the latter, the lateral space (4) of the said region (4, 5) of the second type situated between the emitter (7) and collector (8) regions forming the base of the transistor, the emitter region (7) having a depth and a doping level which are such that the diffusion length for the minority carriers injected vertically into it is greater than or equal to the thickness of the said region, the latter having an elongate form in at least one longitudinal direction, the lateral transistor having its outline surrounded by a deep insulating layer (12). According to the invention, the collector (8) has at least two zones between which is deposited an elongate part (7) of the emitter region and it includes an additional region (9) of the first type of conductivity, bordering the outline of the transistor and arranged between the outline of the transistor and the deep insulating layer (12) at least facing the ends (7') of the said elongate part of the emitter region.
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