| 摘要 |
PURPOSE:To avoid leakages from the Schottky junction parts of a first FET and a second FET by a method wherein the drain of the second FET is connected to the gate of a third FET and the source of the third FET is connected to the gate of the first FET. CONSTITUTION:The gate of an FET JT1 is connected to the drain of an FET JT2 through a diode D1 and the source and drain of an FET JT5. The gate of the FET JT2 is connected to the drain of the FET JT1 through a diode D2 and the source and gate of an FET JT7. Thus, the drain voltage of one of a pair of the first and second FET's JT1 and JT2 of which a bistable flip- flop in a sensing amplifier is composed is lowered by the gate and source voltage of the third FET JT5 or the fourth FET JT7 and applied to the gate of the other FET. With this constitution, voltage leakages from the Schottky junction parts of the first and second FET's JT1 and JT2 can be avoided. |
