| 摘要 |
<p>PURPOSE:To enhance the contrast of an optical image formed by exposing a lower layer to be patterned by subjecting part of light for exposing the lower layer by uniform irradiation to phase reversal. CONSTITUTION:A lower layer 2 to be patterned and an upper layer 1 to be patterned are successively formed on a substrate 3 and the upper layer 1 is finely patterned. An Si3N4 film 9 is uniformly formed by CVD and the entire surface of the film 9 is etched back to form a frame 10 along the pattern of the layer 1. The phase shift parts 11 of the lower layer 2 are then etched with a concd. alkali developing soln., etc., and the layer 2 is exposed with deep UV through the resulting mask. A resist image having enhanced contrast and high rectangularity is obtd.</p> |
