| 摘要 |
<p>PURPOSE:To prevent the corrosion of a metal film which is exposed from the element forming surface of a wafer by forming a plurality of through holes reaching the lower surface of the wafer in the vicinities of both ends of dicing lines on the upper surface of the wafer on which semiconductor elements are formed, dicing the wafer along the lines connecting the through holes from the lower surface of the wafer, and dividing the wafer. CONSTITUTION:A plurality of through holes 5 reaching the lower surface of a wafer 1 are formed in the vicinities of both ends of dicing lines 2 and 3 on the upper surface of a wafer 1 on which semiconductor elements are formed. Then, the wafer 1 undergoes dicing from the lower surface along the lines connection the through holes 5. Thus the wafer 1 is divided. Alternatively the through holes 5 reaching the lower surface of the wafer 1 are formed in the vicinities of both ends of the dicing lines 2 and 3 on the upper surface of the wafer 1 on which the semiconductor elements are formed, and shallow grooves 6 are formed in the wafer 1 along the dicing lines 2 and 3. Then the wafer 1 undergoes dicing along the lines connecting the through holes 5, and the wafer 1 is divided.</p> |
