| 摘要 |
An integrated semiconductor device including at least one optoelectronic switching element, which comprises: two rectilinear monomode optical guides crossing each other at an angle 20 theta composed of at least one heterostructure of III-V material, which comprises a substrate S of a confinement material and a guiding layer CG as well as a guiding strip RB, a p-n junction formed in the crossing region asymmetrically with respect to the bi-secting longitudinal plane of the crossing angle, characterized in that the longitudinal dimension of the p-n junction largely exceeds that of the crossing region, and in that the p-n junction is arranged so as to project symmetrically on either side of this region in this longitudinal direction.
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