发明名称 RAPID ALLOYING PROCESS FOR LOW RESISTANCE OMIC CONTACT
摘要 The methof is used for manufacturing integrated circuits requiring GaAs material. The rapid alloying is performed during 20 sec in 450 degree C, as compound gas mixed with N2 and H2 of 90 vs 10 ratio, flows at the speed of 2 l/min continuously. In this condition, the method offers reduction of the processing time in manufacturing integrated circuit.
申请公布号 KR910008829(B1) 申请公布日期 1991.10.21
申请号 KR19880010290 申请日期 1988.08.12
申请人 LEE JIN-KU 发明人 LEE JIN-KU
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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