| 摘要 |
<p>PURPOSE:To surely separate patterns and to prevent overetching by treating the regions other than the transparent electrode forming region with plasma before the transparent electrode is formed on an overcoat layer. CONSTITUTION:A color filter 2 is formed on a glass substrate 1, and an overcoat layer 3 is formed thereon. A resist film 51 is then formed thereon, and the overcoat layer 3 is treated with plasma with the film 51 as a mask. The film 51 is removed, and an ITO film 4 is formed on the overcoat layer 3 as a transparent conductive film. A resist film 52 covering the transparent electrode forming region is formed on the ITO film 4, the ITO film 4 is etched with the resist film 52 as a mask, and the exposed part of the ITO film 4 is removed. Consequently, the etching rate is increased, the variance in the substrate is reduced since the etching of the transparent conductive film is formed in a short time, and the yield is improved.</p> |
