LASER DIODE MIRROR PHASE MANUFACTURE METHOD USING 2 STEP CHEMICAL METHOD

摘要

The method for mirror facet in the fabrication of semiconductor laser diode has two basic steps: forming a strip pattern of (001) direction at (100) GaAs/ AlGaAs or InP/InGaAsP wafer with photoresist, followed by initial etching; making the angle of etched layer in perpendicularity by second chemical etching after removing the photo resist. The etching solution is surface reaction limited type, and each layer of wafer has the same etch rate.