| 摘要 |
PURPOSE:To enable adhesion property with a substrate as well as yield of a GaAs semiconductor device to be improved by depositing a platinum film onto the substrate and then depositing the titanium film, a platinum film, and a gold film on it in sequence. CONSTITUTION:An N-type semiconductor region is formed on a GaAs substrate 1, a gate electrode 5 is selectively formed on it, a desired resist film is formed on it and at both sides, a high-dose N-type impurity is ion-implanted, heat treatment is performed and the impurity is activated, and then an N<+> region 2 and an N<-> region 3 are formed. After that, an ohmic electrode 4 is selectively formed on the N<+> region 2. Then, a desired region is covered with a photoresist film 11 and then metal films are deposited in a deposition furnace in sequence, namely metal films with a film thickness of 5Angstrom -50Angstrom (for example, a platinum film 7 which is approximately 20Angstrom thick), a film thickness of 100Angstrom -1000Angstrom (for example, titanium film 8 which is approximately 1000Angstrom thick) a film thickness of 200Angstrom -10000Angstrom (for example, a platinum film 9 which is approximately 300Angstrom thick), and a film thickness of 300Angstrom -10000Angstrom (for example, a platinum film which is approximately 8000Angstrom ). Then, the resist film 11 is eliminated. |
