| 摘要 |
PURPOSE:To improve the performance of a high electron-mobility FET by forming the hetero-junction of an InGaAs layer and an InGaP layer, to which an impurity is doped, and using the InGaAs layer as the channel of interface- quantized carriers. CONSTITUTION:An AlGaAs buffer layer 2, an InGaAs layer 3, an InGaP electron supply layer 4 and a GaAs layer 5 are shaped onto a semi-insulating GaAs substrate 1. Source-drain electrodes 8 are patterned onto the layer by employing AuGe/Au, etc., and alloy regions 8A are formed in depth reaching the layer 3 through heat treatment. A gate electrode 9 is shaped onto the layer 5. According to such constitution, the surface concentration of a two-dimensional electron gas is increased by the hetero-junction of the layer 3 and the layer 4. Since the electrode 9 is formed onto the layer 5, the large height of a Schottky barrier is acquired, thus improving performance. |
