发明名称 POSITIVE TYPE ELECTRON BEAM RESIST COMPOSITION
摘要 PURPOSE:To obtain resist patterns having a high sensitivity and excellent image contrast by incorporating specific org. carboxylic acid, specific cresol novolak resin and naphthoquinone-1, 2-diadize-4-sulfonic acid ester of polyhydroxybenzophenone into the above resist compsn. CONSTITUTION:This compsn. is formed by incorporating the org. carboxylic acid expressed by formula I, the cresol novolak resin obtd. from the cresol mixture composed of 10 to 45wt.% m-cresol and 90 to 55wt.% p-cresol and the naphthoquinone-1, 2-diadize-4-sulfonate or the polyhydroxybenzophenone into the compsn. In the formula, R<1> and R<2> are respectively a hydrogen atom, halogen atom, hydroxyl group, nitro group, aldehyde group, alkoxy group, N, N-dialkyl amino group or carboxyl group, which may be the same as or different from each other. The resist patterns having the high sensitivity and the excellent image contrast are obtd. in this way.
申请公布号 JPH03210564(A) 申请公布日期 1991.09.13
申请号 JP19900006821 申请日期 1990.01.16
申请人 TOKYO OHKA KOGYO CO LTD 发明人 TAKEDA YASUYUKI
分类号 G03F7/022;G03F7/004;G03F7/023;H01L21/027;H01L21/30 主分类号 G03F7/022
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