发明名称 EPITAXIAL WAFER AND MANUFACTURE THEREOF
摘要 PURPOSE:To diminish the development of strain, defects at the junction in a system having unmatched lattice by a method wherein the changing gradient in composition in an overshoot structure (corresponding to the changing gradient of lattice constant) is made more gentle. CONSTITUTION:After the epitaxial formation of lattice constant transition layers C, D (2) on the surface (a) of a substrate A (1) in lattice constant alpha, an epitaxial layer B (3) in a specific lattice constant beta is mounted on the surface (a). The lattice constant is gradually changed from the surface (a) to (c) so that the lattice constant(r) at the point (c) may exceed beta in the layer C. The excess level shall be 1/5-1/10 of the unmatched level of the lattice constant. After passing the point (c), the transition layer D (2) is provided to make the lattice constant approach to the lattice constant beta of the target layer B. The changing gradient shall be more gentle than that of the layer C so as to ease the strain. That is, about 1/3 of the gradient in the layer C will suffice for the changing gradient. In such a constitution, the changing rate of the lattice constant can be optimized, especially after exhibiting the overshoot structure, to be gradually changed thereby enabling a once imposed strain to be substantial ly eased.
申请公布号 JPH03203316(A) 申请公布日期 1991.09.05
申请号 JP19890342933 申请日期 1989.12.29
申请人 SHOWA DENKO KK 发明人 HOSOKAWA YASUO;OKUYAMA MINEO;SAKAGUCHI YASUYUKI;BANDO AKIRA;SAITO YUTAKA
分类号 H01L21/20;H01L21/205;H01L33/30 主分类号 H01L21/20
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