Semiconductor EEPROM with matrix of memory cells - has first writing word line, and second one coupled to different memory cell

摘要

The memory cell matrix comprises lines and columsn. A first word line is coupled to a corresponding memory cell for signal writing. The first word line is held on a first potential. A second word line is coupled to another memory cell for signal writing and is held also at the first potential. A potential applicator provides a second potential to the first word line. A detector determines the value of the second potential on the first word line as of lower value than the first potential. In dependance of the detector signal is operted a control for the potential applicator such that the second potential is applied to the second word line instead of to the first one. USE/ADVANTAGE - For ECC circuits, with increased reliability and prod. yield.