| 摘要 |
PURPOSE: To obtain an optical amplifier-photodetector device which has small dimensions and a high operation characteristic by integrating a photodetector and an optical amplifier on the same chip. CONSTITUTION: A layer 16 in a second area 8 is removed by material selective etching, and an n-OnP layer 24 is grown by organic metal vapor-phase deposition (MOCVD) or a similar method. Next, a p-InGaAs layer 26 is grown on the top of the layer 24, and a p-n junction is formed in a junction between layers 24 and 26. Next, a wafer is processed to form the optical amplifier and the photodetector in a first area 6 and the second area 8 respectively. During the operation, the light energy generated by the optical amplifier passes the photodetector and is propagated along a waveguide core 14. When it passes a photo diode, a slight part of the energy of mode intensity distribution is detected by the photo diode to generate a signal. Thus, the device is made compact, and the number of elements is reduced, and the characteristic is improved. |
