发明名称 Monocrystalline silicon wafer
摘要 A silicon wafer in which a plurality of semiconductor devices are to be formed is disclosed. The silicon wafer has a convex front surface before a process step for forming the semiconductor devices is conducted. The shape of the convex is designed such that during process steps to form and to complete the semiconductor devices in the silicon wafer, the shape of the front surface usually maintains convex conditions without changing to a concave condition.
申请公布号 US5043044(A) 申请公布日期 1991.08.27
申请号 US19880212078 申请日期 1988.06.28
申请人 NEC CORPORATION 发明人 HATTORI, JUNICHI;TAKAHATA, KOICHIRO
分类号 H01L21/02;H01L21/322;H01L21/324 主分类号 H01L21/02
代理机构 代理人
主权项
地址