| 摘要 |
<p>PURPOSE:To enable an active matrix display in high precision and stable display quality to be manufactured by a method wherein semiconductor films and a transparent conductive film are patterned by selfmatching process using the rear exposure while a drain wiring and a source wiring are liftoff formed using a resist for the display electrode patterning process. CONSTITUTION:Etching resists of semiconductor films S4, S5 and a transparent conductive film C6 are formed in self-aligned manner in offset state on a gate wiring provided with a gate electrode 2 using the rear exposure with the semiconductor films S4, S5 and the transparent conductive film C6 respectively formed on the gate electrode 2 and the gate wiring. Furthermore, a drain wiring provided with a drain electrode part 8 as well as a source electrode wiring are liftoff formed using the etching resist of the transparent conductive film C6 further exposure-processed. Through these procedures, respective patterns can be formed by etching and liftoff processes using substantially the same resist so that the highly precise display electrode 6, the drain wiring and a source electrode wiring subjected to no adverse effect of a photomask and an exposure device may be manufactured.</p> |
