发明名称 MODULE-TYPE SEMICONDUCTOR DEVICE OF HIGH POWER CAPACITY
摘要 <p>One of a pair of the module type semiconductor devices(401, 401a), signal input terminals (Es, G) are located on the other side of current output terminals (E) with respect to current input terminals (C), and that, in the other of a pair of the module type semiconductor devices (402, 402a), signal input terminals are mounted on the other side of current input terminals with respect to current output terminals. Distance of connections between element in the case of bridge connections may be shortened to the minimum. Since the signal input terminals (Es, G) may be located outside the bus bars (601, 602, 603) openings need not be formed in the bus bar. Space or the bus bar's surface area thus may be effectively used, with the result that a decrease in commutating inductance is achieved.</p>
申请公布号 EP0417747(A3) 申请公布日期 1991.08.21
申请号 EP19900117523 申请日期 1990.09.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HIDESHIMA, MAKOTO, C/O INTELLECTUAL PROPERTY DIV.
分类号 H01L25/07;H01L25/10;H01L25/11;H01L25/18;H02M7/00;H02M7/48;(IPC1-7):H01L25/11 主分类号 H01L25/07
代理机构 代理人
主权项
地址