| 摘要 |
<p>PURPOSE:To obtain a new static information memory element which has the feature of a semiconductor memory and a disk memory together by making constitution in which an electrode is provided respectively on the face orthogonal to the azimuth in which the spontaneous polarization of a ferromagnetic ferroelectric substance having electro-magnetic effect. CONSTITUTION:The memory element is constituted of providing an electrode respectively on the face orthogonal to an azumuth in which the spontaneous polarization of a ferromagnetic ferroelectric substance having electro-magnetic effect. According to the static information memory element, since the writing and reading of information can be executed electrically, access speed equal to a semiconductor memory or more than that can be obtained. Besides, since the information is held as the condition of magnetization, constant information storing is attained without being disturbed by electrical external noise. Thus, the static information memory element in which the high speed access property of the usual semiconductor memory and the holdability of the information of the disk memory are provided together is obtained.</p> |
