发明名称 MANUFACTURE OF PHOTOVOLTAIC DEVICE
摘要 PURPOSE:To form an amorphous silicon film hardly released within a short deposition time by a method wherein an amorphous silicon dioxide film is laid between a transparent insulating substrate and the amorphous silicon film. CONSTITUTION:An amorphous silicon dioxide film 5 is formed on a transparent insulating substrate 1. Next, one or more transparent electrodes 2 are formed on the film 5. Later, an amorphous silicon film 3 is formed on the transparent electrodes 2 so as to make a part of the film 3 reach the amorphous silicon dioxide film 5. Finally, the title photovoltaic device can be manufactured by forming one or more metallic electrodes 4 if necessary.
申请公布号 JPH03188681(A) 申请公布日期 1991.08.16
申请号 JP19900113571 申请日期 1990.04.27
申请人 FUJI ELECTRIC CORP RES & DEV LTD;FUJI ELECTRIC CO LTD 发明人 MIYAGI MASAHIDE;MARUYAMA KAZUMI
分类号 H01L31/04;H01L21/336;H01L21/84;H01L29/786 主分类号 H01L31/04
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