发明名称 |
MANUFACTURE OF PHOTOVOLTAIC DEVICE |
摘要 |
PURPOSE:To form an amorphous silicon film hardly released within a short deposition time by a method wherein an amorphous silicon dioxide film is laid between a transparent insulating substrate and the amorphous silicon film. CONSTITUTION:An amorphous silicon dioxide film 5 is formed on a transparent insulating substrate 1. Next, one or more transparent electrodes 2 are formed on the film 5. Later, an amorphous silicon film 3 is formed on the transparent electrodes 2 so as to make a part of the film 3 reach the amorphous silicon dioxide film 5. Finally, the title photovoltaic device can be manufactured by forming one or more metallic electrodes 4 if necessary. |
申请公布号 |
JPH03188681(A) |
申请公布日期 |
1991.08.16 |
申请号 |
JP19900113571 |
申请日期 |
1990.04.27 |
申请人 |
FUJI ELECTRIC CORP RES & DEV LTD;FUJI ELECTRIC CO LTD |
发明人 |
MIYAGI MASAHIDE;MARUYAMA KAZUMI |
分类号 |
H01L31/04;H01L21/336;H01L21/84;H01L29/786 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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