| 摘要 |
PURPOSE:To obtain an element separation method with high yield and low production cost by forming an element on the surface of a semiconductor substrate, forming a retaining body at the surface side of the substrate, and then forming a penetration groove so that the element may be separated from the substrate rear surface side to the substrate. CONSTITUTION:An element is formed on the surface of a semiconductor substrate 1, a retaining body 9 is formed on the surface side of the substrate 1, and a penetration groove 11 is formed from the rear surface side of that substrate 1 toward the substrate 1 for separating the element. For example, an SiO2 film 2 and an SiN film 3 are formed on the surface of a P-type Si single-crystal substrate 1, a hole of a specified shape is opened on them. and an n-type diffusion layer 4 is formed. Then, an SiO2 film 5 is formed, a window for electrode is opened on it, and then an electrode wiring 6 is formed. Then, a ceramic retaining plate 8 is adhered to the surface side of the substrate 1 by an adhesion layer 7 for forming a retaining body 9 and the rear surface of the substrate 1 is cut, thus making thin the substrate 1. Then, a metal film 10 which becomes a reflection film is formed on the entire rear surface of the substrate 1, a part for forming the groove 11 is eliminated, and each solar cell element is separated by forming the groove 11 with the remaining metal film 10 as a mask. |
