发明名称 SEMICONDUCTOR INTEGRATED DEVICE
摘要 <p>PURPOSE:To offer an electrode pad structure which can be made fine and highly accurate by a method wherein a plurality of pads for electrode use are opened by one passivation-film opening. CONSTITUTION:Two electrode pads 106 and 107 are opened by one passivation opening 202. Three electrode pads 108, 109, 110 are opened by one passivation- film opening 203. A film 302 which is not dissolved by an etching liquid used to open the passivationfilm opening parts 202, 203 is laid. Thereby, it is not required to etch a passivation film whose etching accuracy is bad at each pad. As a result, it is possible to shorten a space between pads down to a width which is decided by the etching accuracy of a pad metal.</p>
申请公布号 JPH03183142(A) 申请公布日期 1991.08.09
申请号 JP19890322014 申请日期 1989.12.12
申请人 SEIKO EPSON CORP 发明人 KADOWAKI TADAO
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址