| 摘要 |
PURPOSE:To prevent scattering of the characteristics by accommodating a BaTiO3-based molding in a burning sheath composed of an SiC layer and Al2O3 layers so that the molding is located on the Al2O3 layer side, placing the sheath in a furnace and carrying out burning. CONSTITUTION:A prescribed ratio of respective components are weighed so as to have a composition of BaTiO3 semiconductor porcelain and the weighed components are mixed, ground and dried. A suitable amount of a binder is added to the resultant dried powder of the raw materials and the obtained mixture is granulated and subsequently press-formed so as to obtain a molding 6. On the Al2O3 layer 1 side in a burning sheath composed of an SiC layer 2 sandwiched between Al2O3 layers 1, powdery ZrO2 7 is then laid over and the molding 6 is accommodated thereon. The burning sheath is subsequently placed in a furnace, burnt by raising the temperature to a prescribed temperature at a prescribed rate and then cooled, thus obtaining the objective BaTiO3- based semiconductor porcelain. |
