| 摘要 |
<p>According to this invention, there is provided a semiconductor device including a semiconductor substrate (1) of a first conductivity type, single continuous cylindrical regions (4) formed on a surface of the semiconductor substrate (1) and having side walls opposite to each other at at least one portion, a first insulating film (5) which is formed on the side wall of the cylindrical region (4) and on a bottom surface of a groove (3) formed by the cylindrical regions (4) and which projects from the side wall of the cylindrical region (4), a conductive layer (6) formed on the first insulating film (5), a second insulating film (5) formed on the conductive layer (6), a first impurity region (71) of a second conductivity type formed at a position below the bottom surface of the groove (3) of the semiconductor substrate (1), a second impurity region (102) of the second conductivity type formed on a top surface of the cylindrical region (4), first and second metal layers (101, 102) for filling the groove (3) and a portion surrounded by the top surface of the cylindrical region (4) and the first insulating film (5), and a third insulating film (12) for covering the first and second metal layers (101, 102).</p> |
