发明名称 POWER SUPPLY VOLTAGE CONVERTING CIRCUIT OF HIGH DENSITY SEMICONDUCTOR MEMORY DEVICE
摘要 The converter system comprises a reference voltage generator (40) for generating a const. voltage (VREF) and two power supply circuit (20P,20A) for providing a internal supply voltage (InVcc) to the peripheral and array circuits, respectively. Each of the power circuits (20P,20A) comprises a devider (2) generating a voltage (Vp) proportional to InVcc; a main pwer supply unit (22M) including a main differential amplifier (30P,30A) comparing Vp with VREF, and being activated by as pulse (ENP, ENA) when a high load current in requided, and a main power component (32P,32A) providing InVcc; and a subsidiary power supply unit (22S) including a differential amplifier (31P,31A) and a power component (33P,33A).
申请公布号 KR910005599(B1) 申请公布日期 1991.07.31
申请号 KR19890005792 申请日期 1989.05.01
申请人 SAM SUNG ELECTRONICS CO.,LTD. 发明人 MIN DONG-SUN;KIM CHANG-HYUN;JIN DAE-JE
分类号 G06F1/26;G05F1/46;G05F3/24;G11C5/14;G11C11/40;G11C11/407;G11C11/4074;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;(IPC1-7):G11C11/40 主分类号 G06F1/26
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