| 摘要 |
Disclosed is a method of measuring physical properties of a buried channel, e.g., a generation current in a semiconductor substrate in which the buried channel is formed, a generation current of the surface of the semiconductor substrate, a channel potential and a surface potential of the buried channel. A gate ramp voltage is applied to a gate electrode formed over the buried channel and a current generated from a depletion layer at the buried channel and a gate current produced by changes in the capacitance of the buried channel are measured. The physical properties of the buried channel are obtained from the measured currents.
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