| 摘要 |
PURPOSE:To obtain a zinc sulfide compound semiconductor which is mechanically strong, easy and economical for manufacturing, and having a good crystal property by herero-epitaxially growing a beta-type zinc sulfide compound semiconductor on the (0, 0, 1) surface of a silicon single crystal substrate. CONSTITUTION:A beta-type lattice zinc sulfide compound semiconductor layer (ZnS layer) 12 is hetero-epitaxially grown and formed on a silicon single crystal substrate (Si substrate) 10. An n-type zinc sulfide compound semiconductor layer and a p-type zinc sulfide compound semiconductor layer are successively laminated on this ZnS layer 12, and blue light is emitted from the interface between these n-type zinc sulfide compound semiconductor layer and p-type zinc sulfide compound semiconductor layer. Herein, the growth surface of the Si substrate 10 is basically the (0, 0, 1) surface, but it is inclined by 2 deg. in the direction of (1, 1, 0). Thus, the beta-type zinc sulfide compound semiconductor which is mechanically strong, easy and economical for manufacturing, and having a good crystal property, can be obtained. |
