Fabrication method for biMOS semiconductor device with improved speed and reliability.

摘要

To create bipolar and MOS transistors, a substrate is covered with polysilicon. The polysilicon is patterned to form gate electrodes in MOS transistor regions, and to form polysilicon patterns surrounding central openings in bipolar transistor base-and-emitter regions. Lightly-doped source and drain layers are created by implanting impurities into the MOS transistor regions, using the gate electrodes as masks. Active bases are formed in the base-and-emitter regions below the central openings. Then sidewalls are added to the polysilicon, narrowing the central openings and widening the gate electrodes. Impurities are implanted into the MOS transistor regions, using the widened gate electrodes as masks, to create heavily-doped source and drain layers. The active base areas are doped below the narrowed central openings to create emitters.